IRFR224PBF
- Mfr.Part #
- IRFR224PBF
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 3.8A DPAK
- Stock
- 4,666
- In Stock :
- 4,666
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 250V
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A Tc
- Drain to Source Resistance :
- 1.1Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Min Operating Temperature :
- -55°C
- Rise Time :
- 13ns
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Height :
- 2.39mm
- Rds On (Max) @ Id, Vgs :
- 1.1Ohm @ 2.3A, 10V
- Published :
- 2014
- FET Type :
- N-Channel
- Supplier Device Package :
- D-Pak
- Nominal Vgs :
- 4 V
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Termination :
- SMD/SMT
- Input Capacitance :
- 260pF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 260pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Dual Supply Voltage :
- 250V
- Number of Channels :
- 1
- Width :
- 6.22mm
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 20 ns
- Weight :
- 1.437803g
- Length :
- 6.73mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 3.8A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn On Delay Time :
- 7 ns
- Power Dissipation :
- 2.5W
- Rds On Max :
- 1.1 Ω
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 250V
- Factory Lead Time :
- 8 Weeks
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 12 ns
- Element Configuration :
- Single
- Recovery Time :
- 400 ns
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IRFR224PBF
N-Channel Tube 1.1Ohm @ 2.3A, 10V ±20V 260pF @ 25V 14nC @ 10V 250V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR224PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 260pF @ 25V.This device conducts a continuous drain current (ID) of 3.8A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 1.1Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFR224PBF Features
a continuous drain current (ID) of 3.8A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 1.1Ohm
a 250V drain to source voltage (Vdss)
IRFR224PBF Applications
There are a lot of Vishay Siliconix
IRFR224PBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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