IRFR220NTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.6Ohm

Drain Current-Max (Abs) (ID) :

5A

Transistor Application :

SWITCHING

Power Dissipation-Max :

43W Tc

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Avalanche Energy Rating (Eas) :

46 mJ

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Published :

2004

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain to Source Voltage (Vdss) :

200V

Transistor Element Material :

SILICON

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

200V

JEDEC-95 Code :

TO-252AA

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

20A

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Number of Elements :

1

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.9A, 10V

ECCN Code :

EAR99

Number of Terminations :

2