IRFR220NTRPBF
- Mfr.Part #
- IRFR220NTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 5A DPAK
- Stock
- 457,525
- In Stock :
- 457,525
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 12 ns
- Turn-Off Delay Time :
- 20 ns
- Resistance :
- 600mOhm
- Case Connection :
- DRAIN
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 200V
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Termination :
- SMD/SMT
- Series :
- HEXFET®
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Current Rating :
- 5A
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 2.9A, 10V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-252AA
- Element Configuration :
- Single
- Recovery Time :
- 140 ns
- Published :
- 2004
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Rise Time :
- 11ns
- Continuous Drain Current (ID) :
- 5A
- Terminal Form :
- Gull wing
- Power Dissipation :
- 43W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 2.52mm
- Dual Supply Voltage :
- 200V
- Number of Elements :
- 1
- Width :
- 6.22mm
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Breakdown Voltage :
- 200V
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 12 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Switching Current :
- 5A
- Power Dissipation-Max :
- 43W Tc
- Avalanche Energy Rating (Eas) :
- 46 mJ
- Max Junction Temperature (Tj) :
- 175°C
- Drain Current-Max (Abs) (ID) :
- 5A
- Nominal Vgs :
- 4 V
- Radiation Hardening :
- No
- Length :
- 6.7056mm
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- JESD-30 Code :
- R-PSSO-G2
- Threshold Voltage :
- 4V
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Turn On Delay Time :
- 6.4 ns
- Pulsed Drain Current-Max (IDM) :
- 20A
- Datasheets
- IRFR220NTRPBF

N-Channel Tape & Reel (TR) 600m Ω @ 2.9A, 10V ±20V 300pF @ 25V 23nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR220NTRPBF Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
IRFR220NTRPBF Applications
High-frequency DC-DC converters
Lead-Free
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