IRFR220NTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

43W

Published :

2004

Recovery Time :

140 ns

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-252AA

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

20 ns

Lead Free :

Lead Free

Number of Terminations :

2

Resistance :

600mOhm

Case Connection :

DRAIN

Height :

2.52mm

Pulsed Drain Current-Max (IDM) :

20A

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

5A

Mount :

Surface Mount

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Termination :

SMD/SMT

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

43W Tc

Voltage - Rated DC :

200V

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Channels :

1

Current Rating :

5A

Drain Current-Max (Abs) (ID) :

5A

Turn On Delay Time :

6.4 ns

Threshold Voltage :

4V

Number of Elements :

1

Switching Current :

5A

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Drain to Source Breakdown Voltage :

200V

Avalanche Energy Rating (Eas) :

46 mJ

Nominal Vgs :

4 V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Max Junction Temperature (Tj) :

175°C

Dual Supply Voltage :

200V

Length :

6.7056mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.9A, 10V

Peak Reflow Temperature (Cel) :

260

Width :

6.22mm

Vgs (Max) :

±20V

Contact Plating :

Tin

Rise Time :

11ns

Transistor Element Material :

SILICON

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant