IRFR220

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta 42W Tc

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

Power Dissipation :

42W

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Case Connection :

DRAIN

Length :

6.73mm

Nominal Vgs :

4 V

Transistor Element Material :

SILICON

REACH SVHC :

Unknown

Fall Time (Typ) :

13 ns

Pin Count :

3

Height :

2.39mm

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Pbfree Code :

yes

Weight :

1.437803g

Threshold Voltage :

4V

Radiation Hardening :

No

ECCN Code :

EAR99

Resistance :

800mOhm

Packaging :

Tube

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.9A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

FET Type :

N-Channel

Voltage - Rated DC :

200V

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

4.8A Tc

Drain to Source Breakdown Voltage :

200V

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

4.8A

Number of Elements :

1

Lead Free :

Lead Free

Turn On Delay Time :

7.2 ns

Number of Channels :

1

Factory Lead Time :

8 Weeks

Width :

6.22mm

Turn-Off Delay Time :

19 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Current Rating :

4.8A

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED

Rise Time :

22ns

Published :

2009

Operating Temperature :

-55°C~150°C TJ