IRFR220,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.9A, 10V

Pulsed Drain Current-Max (IDM) :

19A

Number of Elements :

1

Terminal Finish :

Tin

Published :

2001

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Power Dissipation-Max :

42W Tc

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

4.8A Tc

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

200V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

200V

Series :

TrenchMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Number of Terminations :

2

Drain-source On Resistance-Max :

0.8Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

4.8A

Qualification Status :

Not Qualified

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Terminal Form :

Gull wing