IRFR210
- Mfr.Part #
- IRFR210
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 2.6A DPAK
- Stock
- 9,028
- In Stock :
- 9,028
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 1.5Ohm @ 1.6A, 10V
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance :
- 140pF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 1.437803g
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A Tc
- Min Operating Temperature :
- -55°C
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 10V
- Width :
- 6.22mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Continuous Drain Current (ID) :
- 2.6A
- Turn-Off Delay Time :
- 14 ns
- Drain to Source Breakdown Voltage :
- 200V
- Element Configuration :
- Single
- Height :
- 2.39mm
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- Length :
- 6.73mm
- Vgs (Max) :
- ±20V
- Rise Time :
- 17ns
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 200V
- Input Capacitance (Ciss) (Max) @ Vds :
- 140pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- D-Pak
- Published :
- 2009
- Turn On Delay Time :
- 8.2 ns
- Mount :
- Surface Mount
- Packaging :
- Tube
- RoHS Status :
- Non-RoHS Compliant
- Fall Time (Typ) :
- 8.9 ns
- Rds On Max :
- 1.5 Ω
- Drain to Source Resistance :
- 1.5Ohm
- Power Dissipation :
- 2.5W
- Max Operating Temperature :
- 150°C
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRFR210
N-Channel Tube 1.5Ohm @ 1.6A, 10V ±20V 140pF @ 25V 8.2nC @ 10V 200V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR210 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 140pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 14 ns.This device has a drain-to-source resistance of 1.5Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.2 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFR210 Features
a continuous drain current (ID) of 2.6A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRFR210 Applications
There are a lot of Vishay Siliconix
IRFR210 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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