IRFR18N15DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Surface Mount :

yes

Drain-source On Resistance-Max :

0.125Ohm

Pulsed Drain Current-Max (IDM) :

72A

Avalanche Energy Rating (Eas) :

200 mJ

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Drain to Source Voltage (Vdss) :

150V

Published :

2000

FET Type :

N-Channel

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

125m Ω @ 11A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

150V

Factory Lead Time :

12 Weeks

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

18A

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-252AA

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

110W Tc

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Number of Elements :

1

Transistor Element Material :

SILICON