IRFR18N15D

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.125Ohm

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Power Dissipation-Max :

110W Tc

Published :

2000

Transistor Element Material :

SILICON

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Rds On (Max) @ Id, Vgs :

125m Ω @ 11A, 10V

Case Connection :

DRAIN

Number of Elements :

1

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

18A

Drain to Source Voltage (Vdss) :

150V

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

150V

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Surface Mount :

yes

JEDEC-95 Code :

TO-252AA

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

245

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

72A

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

200 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99