IRFR13N20DTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

110W

Termination :

SMD/SMT

Nominal Vgs :

5.5 V

Contact Plating :

Tin

Length :

6.7056mm

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

30V

Published :

2000

Recovery Time :

210 ns

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

5.5V

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

52A

Drain to Source Breakdown Voltage :

200V

Transistor Application :

SWITCHING

Radiation Hardening :

No

JEDEC-95 Code :

TO-252AA

Turn On Delay Time :

11 ns

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Dual Supply Voltage :

200V

Vgs (Max) :

±30V

Series :

HEXFET®

Terminal Form :

Gull wing

Element Configuration :

Single

Number of Elements :

1

JESD-609 Code :

e3

Height :

2.3876mm

Lead Free :

Contains Lead, Lead Free

Packaging :

Tape and Reel (TR)

Width :

6.22mm

Factory Lead Time :

14 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Rating :

13A

Rise Time :

27ns

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Resistance :

235mOhm

Vgs(th) (Max) @ Id :

5.5V @ 250µA

FET Type :

N-Channel

Voltage - Rated DC :

200V

Power Dissipation-Max :

110W Tc

Number of Terminations :

2

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

235m Ω @ 8A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

13A

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 25V

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

10 ns

Turn-Off Delay Time :

17 ns

ECCN Code :

EAR99

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC