IRFR13N20DTRLP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Published :

2005

Power Dissipation-Max :

110W Tc

Avalanche Energy Rating (Eas) :

130 mJ

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Number of Terminations :

2

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Pulsed Drain Current-Max (IDM) :

52A

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 25V

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Series :

HEXFET®

Case Connection :

DRAIN

FET Type :

N-Channel

JEDEC-95 Code :

TO-252AA

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rds On (Max) @ Id, Vgs :

235m Ω @ 8A, 10V

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

13A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

13A Tc

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.235Ohm

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

200V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

200V