IRFR13N20DTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

130 mJ

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

200V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 25V

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

110W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2000

Rds On (Max) @ Id, Vgs :

235m Ω @ 8A, 10V

JEDEC-95 Code :

TO-252AA

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Drain-source On Resistance-Max :

0.235Ohm

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

52A

Drain Current-Max (Abs) (ID) :

13A

Drain to Source Voltage (Vdss) :

200V

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Terminal Position :

Single

Series :

HEXFET®

JESD-609 Code :

e3

Vgs (Max) :

±30V

Reach Compliance Code :

not_compliant