IRFR13N20DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 25V

Surface Mount :

yes

Vgs(th) (Max) @ Id :

5.5V @ 250µA

JEDEC-95 Code :

TO-252AA

Avalanche Energy Rating (Eas) :

130 mJ

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain to Source Voltage (Vdss) :

200V

Case Connection :

DRAIN

Packaging :

Tube

Transistor Element Material :

SILICON

Published :

2000

JESD-609 Code :

e3

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Rds On (Max) @ Id, Vgs :

235m Ω @ 8A, 10V

DS Breakdown Voltage-Min :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Terminal Form :

Gull wing

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

13A

Drain-source On Resistance-Max :

0.235Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

52A

Power Dissipation-Max :

110W Tc