IRFR12N25DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

25ns

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

14A

REACH SVHC :

No SVHC

Number of Elements :

1

Input Capacitance :

810pF

Number of Pins :

3

Dual Supply Voltage :

250V

Nominal Vgs :

5 V

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

250V

RoHS Status :

RoHS Compliant

Supplier Device Package :

D-Pak

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Current Rating :

14A

Power Dissipation-Max :

144W Tc

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Max Operating Temperature :

175°C

Threshold Voltage :

5V

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Lead Free :

Lead Free

Power Dissipation :

144W

Drain to Source Voltage (Vdss) :

250V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Voltage - Rated DC :

250V

Rds On Max :

260 mΩ

Resistance :

260Ohm

Rds On (Max) @ Id, Vgs :

260mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±30V