IRFR12N25D
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- Mfr.Part #
- IRFR12N25D
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 14A DPAK
- Stock
- 84,197
- In Stock ：
- 84,197
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- Published :
- 2001
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 260m Ω @ 8.4A, 10V
- RoHS Status :
- Non-RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 250V
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Packaging :
- Tube
- Series :
- HEXFET®
- Power Dissipation-Max :
- 144W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 810pF @ 25V
- Datasheets
- IRFR12N25D
N-Channel Tube 260m Ω @ 8.4A, 10V ±30V 810pF @ 25V 35nC @ 10V 250V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR12N25D Description
IRFR12N25D is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 250V. The operating temperature of the IRFR12N25D is -55°C~175°C TJ and its maximum power dissipation is 144W Tc. IRFR12N25D has 3 pins and it is available in Tube packaging way.
IRFR12N25D Features
-
Low Gate-to-Drain Charge to Reduce Switching Losses
-
Fully Characterized Capacitance Including
-
Effective COSS to Simplify Design, (See App. Note AN1001)
-
Fully Characterized Avalanche Voltage and Current
IRFR12N25D Applications
-
High frequency DC-DC converters
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