IRFR120Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-252AA

Drain-source On Resistance-Max :

0.19Ohm

Pulsed Drain Current-Max (IDM) :

35A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

TIN LEAD

Surface Mount :

yes

Number of Terminations :

2

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

35W Tc

Drain Current-Max (Abs) (ID) :

8.7A

JESD-609 Code :

e0

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

245

Series :

HEXFET®

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Published :

2003

Drain to Source Voltage (Vdss) :

100V

Avalanche Energy Rating (Eas) :

18 mJ

RoHS Status :

Non-RoHS Compliant

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Rds On (Max) @ Id, Vgs :

190m Ω @ 5.2A, 10V