IRFR120TRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

6.22mm

Rise Time :

27ns

Current - Continuous Drain (Id) @ 25°C :

7.7A Tc

Vgs (Max) :

±20V

Number of Elements :

1

Fall Time (Typ) :

17 ns

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

18 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Voltage :

100V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

2.39mm

Continuous Drain Current (ID) :

7.7A

Power Dissipation-Max :

2.5W Ta 42W Tc

Drain to Source Breakdown Voltage :

100V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Power Dissipation :

2.5W

REACH SVHC :

Unknown

Number of Channels :

1

Turn On Delay Time :

6.8 ns

Pin Count :

3

Contact Plating :

Tin

Resistance :

270mOhm

Rds On (Max) @ Id, Vgs :

270m Ω @ 4.6A, 10V

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Case Connection :

DRAIN

JEDEC-95 Code :

TO-252AA

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 25V

Current :

77A

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Length :

6.73mm

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

1.437803g

Published :

2013

Number of Pins :

3

Element Configuration :

Single

Number of Terminations :

2

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Radiation Hardening :

No

Nominal Vgs :

2 V