IRFR120NPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Number of Elements :

1

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

JESD-609 Code :

e3

Number of Terminations :

2

Drain-source On Resistance-Max :

0.21Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

38A

JEDEC-95 Code :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Factory Lead Time :

39 Weeks

Power Dissipation-Max :

48W Tc

Published :

1998

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

100V

Rds On (Max) @ Id, Vgs :

210m Ω @ 5.6A, 10V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

Drain to Source Voltage (Vdss) :

100V

Series :

HEXFET®

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

9.4A

Avalanche Energy Rating (Eas) :

91 mJ