IRFR120NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

38A

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

48W Tc

DS Breakdown Voltage-Min :

100V

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Number of Terminations :

2

Vgs (Max) :

±20V

Packaging :

Tube

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

FET Type :

N-Channel

Qualification Status :

Not Qualified

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

210m Ω @ 5.6A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

Drain to Source Voltage (Vdss) :

100V

Published :

1998

Drain-source On Resistance-Max :

0.21Ohm

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

9.4A

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

JESD-609 Code :

e3

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

39 Weeks

Avalanche Energy Rating (Eas) :

91 mJ