IRFR1205TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-252AA

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Resistance :

27mOhm

Voltage - Rated DC :

55V

Rds On (Max) @ Id, Vgs :

27m Ω @ 26A, 10V

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Turn On Delay Time :

7.3 ns

Nominal Vgs :

4 V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

37A

Number of Elements :

1

Series :

HEXFET®

Fall Time (Typ) :

60 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

69W

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

20A

Length :

6.7056mm

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead, Lead Free

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Turn-Off Delay Time :

47 ns

Termination :

SMD/SMT

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Threshold Voltage :

4V

JESD-609 Code :

e3

Power Dissipation-Max :

107W Tc

Width :

6.8mm

Number of Terminations :

2

Element Configuration :

Single

Drain to Source Breakdown Voltage :

55V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

2.3876mm

Rise Time :

69ns

Number of Pins :

3

ECCN Code :

EAR99

FET Type :

N-Channel

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

REACH SVHC :

No SVHC

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Current Rating :

37A

Dual Supply Voltage :

55V

Recovery Time :

98 ns

Transistor Application :

SWITCHING