IRFR1205TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.027Ohm

Power Dissipation-Max :

107W Tc

Vgs (Max) :

±20V

FET Type :

N-Channel

Published :

1998

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-252AA

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Case Connection :

DRAIN

ECCN Code :

EAR99

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Drain Current-Max (Abs) (ID) :

20A

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

27m Ω @ 26A, 10V

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

DS Breakdown Voltage-Min :

55V

Terminal Position :

Single

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

55V

Pulsed Drain Current-Max (IDM) :

160A

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

210 mJ