IRFR110TRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

100V

Weight :

1.437803g

Input Capacitance :

180pF

Turn On Delay Time :

6.9 ns

Height :

2.507mm

Length :

6.73mm

Number of Elements :

1

Drain to Source Breakdown Voltage :

100V

Power Dissipation :

2.5W

Supplier Device Package :

D-Pak

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Fall Time (Typ) :

9.4 ns

Resistance :

540mOhm

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Rise Time :

16ns

FET Type :

N-Channel

Drain to Source Resistance :

540mOhm

Continuous Drain Current (ID) :

4.3A

Number of Channels :

1

Turn-Off Delay Time :

15 ns

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

REACH SVHC :

Unknown

Contact Plating :

Tin

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

540mOhm @ 2.6A, 10V

Rds On Max :

540 mΩ

Width :

6.22mm

Number of Pins :

3

Element Configuration :

Single

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Published :

2010

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Threshold Voltage :

2V

Factory Lead Time :

8 Weeks

Nominal Vgs :

4 V

Power Dissipation-Max :

2.5W Ta 25W Tc