IRFR110TRL
- Mfr.Part #
- IRFR110TRL
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 4.3A DPAK
- Stock
- 40,275
- In Stock :
- 40,275
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 180pF @ 25V
- Number of Channels :
- 1
- Height :
- 2.39mm
- Power Dissipation-Max :
- 25W Tc
- Width :
- 6.22mm
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 8.3nC @ 10V
- Number of Pins :
- 3
- Drain to Source Resistance :
- 540mOhm
- Weight :
- 1.437803g
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Input Capacitance :
- 180pF
- Supplier Device Package :
- D-Pak
- Turn On Delay Time :
- 6.9 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 15 ns
- Fall Time (Typ) :
- 9.4 ns
- Packaging :
- Tape and Reel (TR)
- Length :
- 6.73mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Operating Temperature :
- 150°C
- Mount :
- Surface Mount
- Rds On Max :
- 540 mΩ
- Power Dissipation :
- 2.5W
- Rds On (Max) @ Id, Vgs :
- 540mOhm @ 2.6A, 10V
- Number of Elements :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2013
- Radiation Hardening :
- No
- Rise Time :
- 16ns
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 4.3A
- Datasheets
- IRFR110TRL
N-Channel Tape & Reel (TR) 540mOhm @ 2.6A, 10V ±20V 180pF @ 25V 8.3nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR110TRLPBF Overview
A device's maximum input capacitance is 180pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 540mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR110TRLPBF Features
a continuous drain current (ID) of 4.3A
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRFR110TRLPBF Applications
There are a lot of Vishay Siliconix
IRFR110TRLPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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