IRFR110PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

540mOhm

Radiation Hardening :

No

Lead Free :

Lead Free

Published :

2006

Turn On Delay Time :

6.9 ns

Height :

2.39mm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

25W

Pbfree Code :

yes

Turn-Off Delay Time :

15 ns

Number of Elements :

1

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Threshold Voltage :

4V

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

75 mJ

Transistor Element Material :

SILICON

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

Unknown

Recovery Time :

200 ns

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Number of Channels :

1

Factory Lead Time :

8 Weeks

Fall Time (Typ) :

9.4 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Rise Time :

16ns

Nominal Vgs :

4 V

Power Dissipation-Max :

2.5W Ta 25W Tc

Element Configuration :

Single

Continuous Drain Current (ID) :

4.3A

Weight :

1.437803g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.22mm

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Pin Count :

3

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Current Rating :

4.7A

Length :

6.73mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

100V

Rds On (Max) @ Id, Vgs :

540m Ω @ 2.6A, 10V

Number of Pins :

3

Packaging :

Tube

Drain to Source Breakdown Voltage :

100V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-252AA

Number of Terminations :

2