IRFR110ATM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

240 pF @ 25 V

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Manufacturer :

Rochester Electronics LLC

FET Feature :

-

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

4.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

400mOhm @ 2.35A, 10V

Terminal Position :

Single

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

260

Technology :

MOSFET (Metal Oxide)

JEDEC-95 Code :

TO-252

Pbfree Code :

yes

Number of Elements :

1

Operating Temperature :

-55°C ~ 150°C (TJ)

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Series :

-

Vgs (Max) :

±20V

Product Status :

Active

Pin Count :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

100 V

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 10 V

Surface Mount :

yes

Polarity/Channel Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

19 A

Avalanche Energy Rating (Eas) :

59 mJ

Supplier Device Package :

DPAK

Number of Terminals :

2

Terminal Finish :

MATTE TIN

Package :

Bulk

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

100 V

JESD-609 Code :

e3

Power Dissipation (Max) :

2.5W (Ta), 20W (Tc)

Drain-source On Resistance-Max :

0.4 Ω

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING