IRFR110
- Mfr.Part #
- IRFR110
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 4.3A DPAK
- Stock
- 2,374
- In Stock :
- 2,374
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2016
- RoHS Status :
- Non-RoHS Compliant
- Max Operating Temperature :
- 150°C
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A Tc
- Rds On (Max) @ Id, Vgs :
- 540mOhm @ 2.6A, 10V
- Width :
- 6.22mm
- Power Dissipation :
- 2.5W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Rds On Max :
- 540 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Input Capacitance :
- 180pF
- Gate Charge (Qg) (Max) @ Vgs :
- 8.3nC @ 10V
- Packaging :
- Tube
- Drain to Source Resistance :
- 540mOhm
- Supplier Device Package :
- D-Pak
- Length :
- 6.73mm
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Pins :
- 3
- Fall Time (Typ) :
- 9.4 ns
- Turn-Off Delay Time :
- 15 ns
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 2.39mm
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 4.3A
- Turn On Delay Time :
- 6.9 ns
- Number of Channels :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 180pF @ 25V
- Min Operating Temperature :
- -55°C
- Drain to Source Breakdown Voltage :
- 100V
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- Rise Time :
- 16ns
- Weight :
- 1.437803g
- Datasheets
- IRFR110
N-Channel Tube 540mOhm @ 2.6A, 10V ±20V 180pF @ 25V 8.3nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR110 Overview
A device's maximal input capacitance is 180pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.3A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 540mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFR110 Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRFR110 Applications
There are a lot of Vishay Siliconix
IRFR110 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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