IRFR1018ETRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

8.4mOhm

Element Configuration :

Single

Turn On Delay Time :

13 ns

Published :

2009

Max Operating Temperature :

175°C

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 50V

Length :

6.7056mm

Series :

HEXFET®

Continuous Drain Current (ID) :

56A

Power Dissipation-Max :

110W Tc

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Rds On (Max) @ Id, Vgs :

8.4mOhm @ 47A, 10V

Power Dissipation :

110W

Rds On Max :

8.4 mΩ

Drain to Source Breakdown Voltage :

60V

Turn-Off Delay Time :

55 ns

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Vgs(th) (Max) @ Id :

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

60V

Rise Time :

35ns

RoHS Status :

RoHS Compliant

Number of Pins :

3

Input Capacitance :

2.29nF

Fall Time (Typ) :

46 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Width :

6.22mm

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Supplier Device Package :

D-Pak

Height :

2.3876mm