IRFR1018EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Transistor Element Material :

SILICON

Power Dissipation-Max :

110W Tc

Case Connection :

DRAIN

Threshold Voltage :

4V

Factory Lead Time :

15 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 47A, 10V

Number of Elements :

1

Terminal Form :

Gull wing

Mount :

Surface Mount

Lead Free :

Lead Free

Number of Pins :

3

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

56A

Fall Time (Typ) :

46 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

110W

Recovery Time :

39 ns

Rise Time :

35ns

REACH SVHC :

No SVHC

Radiation Hardening :

No

Continuous Drain Current (ID) :

79A

Height :

2.3876mm

Width :

6.22mm

Drain to Source Breakdown Voltage :

60V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JEDEC-95 Code :

TO-252AA

JESD-609 Code :

e3

Length :

6.7056mm

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 50V

Turn-Off Delay Time :

55 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Published :

2008

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 100µA

Avalanche Energy Rating (Eas) :

88 mJ

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Turn On Delay Time :

13 ns

Drain-source On Resistance-Max :

0.0084Ohm

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Series :

HEXFET®