IRFR1010ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Fall Time (Typ) :

48 ns

Lead Free :

Lead Free

Number of Terminations :

2

Power Dissipation :

140W

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Height :

2.3876mm

JEDEC-95 Code :

TO-252AA

Power Dissipation-Max :

140W Tc

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0075Ohm

Transistor Application :

SWITCHING

Terminal Position :

Single

Turn-Off Delay Time :

42 ns

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 25V

Continuous Drain Current (ID) :

91A

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 42A, 10V

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Width :

6.22mm

Avalanche Energy Rating (Eas) :

220 mJ

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 100µA

Published :

2010

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

42A

Case Connection :

DRAIN

Radiation Hardening :

No

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

55V

Current - Continuous Drain (Id) @ 25°C :

42A Tc

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Factory Lead Time :

12 Weeks

Mount :

Surface Mount

Rise Time :

76ns

Length :

6.7056mm

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

17 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V