IRFR1010ZTRLPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 42A, 10V

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 25V

Width :

6.22mm

Current - Continuous Drain (Id) @ 25°C :

42A Tc

FET Type :

N-Channel

Series :

HEXFET®

ECCN Code :

EAR99

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

42 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

48 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Length :

6.7056mm

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

220 mJ

Drain-source On Resistance-Max :

0.0075Ohm

Drain to Source Breakdown Voltage :

55V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

42A

Rise Time :

76ns

JESD-609 Code :

e3

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

JEDEC-95 Code :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2010

Power Dissipation :

140W

Factory Lead Time :

12 Weeks

Number of Pins :

3

Height :

2.3876mm

Transistor Application :

SWITCHING

Number of Terminations :

2

Turn On Delay Time :

17 ns

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Power Dissipation-Max :

140W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE