IRFR1010Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Terminal Finish :

TIN LEAD

Peak Reflow Temperature (Cel) :

245

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.0075Ohm

Pulsed Drain Current-Max (IDM) :

360A

Surface Mount :

yes

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-252AA

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 25V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 42A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

55V

Number of Elements :

1

JESD-609 Code :

e0

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

110 mJ

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Published :

2004

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

4V @ 100µA

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

42A

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

55V

FET Type :

N-Channel

Number of Terminations :

2

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Series :

HEXFET®

Power Dissipation-Max :

140W Tc

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE