IRFR024NTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

55V

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.075Ohm

Avalanche Energy Rating (Eas) :

71 mJ

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-252AA

Rds On (Max) @ Id, Vgs :

75m Ω @ 10A, 10V

Reach Compliance Code :

not_compliant

Drain to Source Voltage (Vdss) :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Series :

HEXFET®

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

17A

JESD-609 Code :

e3

Published :

1998

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

Power Dissipation-Max :

45W Tc

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Pulsed Drain Current-Max (IDM) :

68A