IRFR024NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.075Ohm

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

55V

Drain to Source Voltage (Vdss) :

55V

Rds On (Max) @ Id, Vgs :

75m Ω @ 10A, 10V

Number of Terminations :

2

Series :

HEXFET®

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

17A

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Pulsed Drain Current-Max (IDM) :

68A

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Avalanche Energy Rating (Eas) :

71 mJ

FET Type :

N-Channel

Packaging :

Tube

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

JEDEC-95 Code :

TO-252AA

Number of Elements :

1

Power Dissipation-Max :

45W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99

Published :

1998

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V