IRFR020PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Pulsed Drain Current-Max (IDM) :

56A

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

14A

Packaging :

Tube

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Fall Time (Typ) :

42 ns

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Rise Time :

58ns

Weight :

1.437803g

Width :

6.22mm

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Number of Pins :

3

Transistor Element Material :

SILICON

Radiation Hardening :

No

FET Type :

N-Channel

Turn On Delay Time :

13 ns

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2013

Additional Feature :

FAST SWITCHING

Turn-Off Delay Time :

25 ns

Height :

2.39mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.5W Ta 42W Tc

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

100m Ω @ 8.4A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60V

Length :

6.73mm

Number of Channels :

1

Mount :

Surface Mount