IRFPS40N60K
- Mfr.Part #
- IRFPS40N60K
- Manufacturer
- Vishay
- Package / Case
- TO-274AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 40A SUPER247
- Stock
- 7,876
- In Stock :
- 7,876
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 60 ns
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 7970pF @ 25V
- Element Configuration :
- Single
- Rds On Max :
- 130 mΩ
- Supplier Device Package :
- SUPER-247™ (TO-274AA)
- Weight :
- 38.000013g
- Max Operating Temperature :
- 150°C
- Radiation Hardening :
- No
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Height :
- 20.8mm
- Power Dissipation :
- 570W
- Length :
- 16.1mm
- Published :
- 2017
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 130mOhm @ 24A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 330nC @ 10V
- Power Dissipation-Max :
- 570W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 40A
- Turn-Off Delay Time :
- 97 ns
- Input Capacitance :
- 7.97nF
- Packaging :
- Tube
- Number of Channels :
- 1
- Min Operating Temperature :
- -55°C
- Width :
- 5.3mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 600V
- Number of Pins :
- 3
- Drain to Source Resistance :
- 130mOhm
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Rise Time :
- 110ns
- Package / Case :
- TO-274AA
- Drain to Source Voltage (Vdss) :
- 600V
- Turn On Delay Time :
- 47 ns
- Datasheets
- IRFPS40N60K
N-Channel Tube 130mOhm @ 24A, 10V ±30V 7970pF @ 25V 330nC @ 10V 600V TO-274AA
IRFPS40N60K Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7970pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 40A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 97 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 130mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 47 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFPS40N60K Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 97 ns
single MOSFETs transistor is 130mOhm
a 600V drain to source voltage (Vdss)
IRFPS40N60K Applications
There are a lot of Vishay Siliconix
IRFPS40N60K applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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