IRFPS40N60K

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Mfr.Part #
IRFPS40N60K
Manufacturer
Vishay
Package / Case
TO-274AA
Datasheet
Download
Description
MOSFET N-CH 600V 40A SUPER247
Stock
7,876
In Stock :
7,876

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
60 ns
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
7970pF @ 25V
Element Configuration :
Single
Rds On Max :
130 mΩ
Supplier Device Package :
SUPER-247™ (TO-274AA)
Weight :
38.000013g
Max Operating Temperature :
150°C
Radiation Hardening :
No
Vgs (Max) :
±30V
Gate to Source Voltage (Vgs) :
30V
RoHS Status :
Non-RoHS Compliant
Mount :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Height :
20.8mm
Power Dissipation :
570W
Length :
16.1mm
Published :
2017
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
130mOhm @ 24A, 10V
Gate Charge (Qg) (Max) @ Vgs :
330nC @ 10V
Power Dissipation-Max :
570W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Continuous Drain Current (ID) :
40A
Turn-Off Delay Time :
97 ns
Input Capacitance :
7.97nF
Packaging :
Tube
Number of Channels :
1
Min Operating Temperature :
-55°C
Width :
5.3mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
600V
Number of Pins :
3
Drain to Source Resistance :
130mOhm
Vgs(th) (Max) @ Id :
5V @ 250μA
Rise Time :
110ns
Package / Case :
TO-274AA
Drain to Source Voltage (Vdss) :
600V
Turn On Delay Time :
47 ns
Datasheets
IRFPS40N60K
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFPS40N60K from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Number of Pins:3, Package / Case:TO-274AA, IRFPS40N60K pinout, IRFPS40N60K datasheet PDF, IRFPS40N60K amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFPS40N60K ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 130mOhm @ 24A, 10V ±30V 7970pF @ 25V 330nC @ 10V 600V TO-274AA

IRFPS40N60K Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7970pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 40A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 97 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 130mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 47 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFPS40N60K Features


a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 97 ns
single MOSFETs transistor is 130mOhm
a 600V drain to source voltage (Vdss)


IRFPS40N60K Applications


There are a lot of Vishay Siliconix
IRFPS40N60K applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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