IRFPS40N50LPBF
- Mfr.Part #
- IRFPS40N50LPBF
- Manufacturer
- Vishay
- Package / Case
- TO-274AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 46A SUPER247
- Stock
- 3,419
- In Stock :
- 3,419
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain to Source Breakdown Voltage :
- 500V
- Turn-Off Delay Time :
- 50 ns
- Factory Lead Time :
- 8 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- Lead Free :
- Lead Free
- Number of Channels :
- 1
- Packaging :
- Tube
- Threshold Voltage :
- 5V
- Current Rating :
- 46A
- REACH SVHC :
- Unknown
- Rise Time :
- 170ns
- Voltage - Rated DC :
- 500V
- Width :
- 5.3mm
- Published :
- 2008
- Input Capacitance :
- 8.11nF
- Drain to Source Voltage (Vdss) :
- 500V
- Resistance :
- 87mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 28A, 10V
- Weight :
- 38.000013g
- Height :
- 20.8mm
- Gate to Source Voltage (Vgs) :
- 30V
- Turn On Delay Time :
- 27 ns
- Package / Case :
- TO-274AA
- Power Dissipation :
- 450W
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Drain to Source Resistance :
- 100MOhm
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 8110pF @ 25V
- Max Operating Temperature :
- 150°C
- FET Type :
- N-Channel
- Rds On Max :
- 100 mΩ
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 46A
- Fall Time (Typ) :
- 69 ns
- Element Configuration :
- Single
- Min Operating Temperature :
- -55°C
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- SUPER-247™ (TO-274AA)
- Power Dissipation-Max :
- 540W Tc
- Mounting Type :
- Through Hole
- Length :
- 16.1mm
- Radiation Hardening :
- No
- Datasheets
- IRFPS40N50LPBF
N-Channel Tube 100mOhm @ 28A, 10V ±30V 8110pF @ 25V 380nC @ 10V 500V TO-274AA
IRFPS40N50LPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8110pF @ 25V.This device conducts a continuous drain current (ID) of 46A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 100mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 27 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFPS40N50LPBF Features
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 100mOhm
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IRFPS40N50LPBF Applications
There are a lot of Vishay Siliconix
IRFPS40N50LPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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