IRFPS40N50L
- Mfr.Part #
- IRFPS40N50L
- Manufacturer
- Vishay
- Package / Case
- TO-274AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 46A SUPER247
- Stock
- 23,901
- In Stock :
- 23,901
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- Non-RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- Input Capacitance :
- 8.11nF
- Turn On Delay Time :
- 27 ns
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation-Max :
- 540W Tc
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 46A
- Turn-Off Delay Time :
- 50 ns
- Width :
- 5.3mm
- Vgs (Max) :
- ±30V
- Height :
- 20.8mm
- Rds On Max :
- 100 mΩ
- Drain to Source Breakdown Voltage :
- 500V
- Weight :
- 38.000013g
- Drain to Source Resistance :
- 100MOhm
- Package / Case :
- TO-274AA
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Supplier Device Package :
- SUPER-247™ (TO-274AA)
- Number of Pins :
- 3
- Number of Channels :
- 1
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 500V
- Rise Time :
- 170ns
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 28A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 8110pF @ 25V
- Min Operating Temperature :
- -55°C
- Fall Time (Typ) :
- 69 ns
- Radiation Hardening :
- No
- Max Operating Temperature :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2017
- Length :
- 16.1mm
- Datasheets
- IRFPS40N50L
N-Channel Tube 100mOhm @ 28A, 10V ±30V 8110pF @ 25V 380nC @ 10V 500V TO-274AA
IRFPS40N50L Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8110pF @ 25V.This device has a continuous drain current (ID) of [46A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.MOSFETs have 100mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 27 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFPS40N50L Features
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 100mOhm
a 500V drain to source voltage (Vdss)
IRFPS40N50L Applications
There are a lot of Vishay Siliconix
IRFPS40N50L applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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