IRFPS38N60LPBF
- Mfr.Part #
- IRFPS38N60LPBF
- Manufacturer
- Vishay
- Package / Case
- TO-274AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 38A SUPER247
- Stock
- 8,189
- In Stock :
- 8,189
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- REACH SVHC :
- Unknown
- Width :
- 5mm
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 320nC @ 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Drain to Source Resistance :
- 120mOhm
- Length :
- 15.6mm
- Published :
- 2015
- Element Configuration :
- Single
- Supplier Device Package :
- SUPER-247™ (TO-274AA)
- Height :
- 20.3mm
- Turn-Off Delay Time :
- 92 ns
- Rise Time :
- 130ns
- Factory Lead Time :
- 8 Weeks
- Mount :
- Through Hole
- Package / Case :
- TO-274AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Power Dissipation-Max :
- 540W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Input Capacitance :
- 7.99nF
- Input Capacitance (Ciss) (Max) @ Vds :
- 7990pF @ 25V
- Fall Time (Typ) :
- 69 ns
- Threshold Voltage :
- 5V
- Radiation Hardening :
- No
- Power Dissipation :
- 540W
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 38A
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Turn On Delay Time :
- 44 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Rds On Max :
- 150 mΩ
- Resistance :
- 150mOhm
- Vgs (Max) :
- ±30V
- Number of Pins :
- 3
- Max Operating Temperature :
- 150°C
- Drain to Source Breakdown Voltage :
- 600V
- Rds On (Max) @ Id, Vgs :
- 150mOhm @ 23A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Channels :
- 1
- Datasheets
- IRFPS38N60LPBF
N-Channel Tube 150mOhm @ 23A, 10V ±30V 7990pF @ 25V 320nC @ 10V 600V TO-274AA
IRFPS38N60LPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7990pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 92 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 120mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 44 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 5V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFPS38N60LPBF Features
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 92 ns
single MOSFETs transistor is 120mOhm
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)
IRFPS38N60LPBF Applications
There are a lot of Vishay Siliconix
IRFPS38N60LPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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