IRFPS38N60L
- Mfr.Part #
- IRFPS38N60L
- Manufacturer
- Vishay
- Package / Case
- TO-274AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 38A SUPER247
- Stock
- 3,055
- In Stock :
- 3,055
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 69 ns
- Package / Case :
- TO-274AA
- Drain to Source Voltage (Vdss) :
- 600V
- Drain to Source Breakdown Voltage :
- 600V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7990pF @ 25V
- Packaging :
- Tube
- Max Operating Temperature :
- 150°C
- Rds On Max :
- 150 mΩ
- Height :
- 20.3mm
- Length :
- 15.6mm
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Rise Time :
- 130ns
- Gate Charge (Qg) (Max) @ Vgs :
- 320nC @ 10V
- FET Type :
- N-Channel
- RoHS Status :
- Non-RoHS Compliant
- Input Capacitance :
- 7.99nF
- Min Operating Temperature :
- -55°C
- Turn On Delay Time :
- 44 ns
- Mount :
- Through Hole
- Element Configuration :
- Single
- Published :
- 2017
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 540W Tc
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Supplier Device Package :
- SUPER-247™ (TO-274AA)
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Width :
- 5mm
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 150mOhm @ 23A, 10V
- Continuous Drain Current (ID) :
- 38A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Resistance :
- 150mOhm
- Turn-Off Delay Time :
- 92 ns
- Vgs (Max) :
- ±30V
- Datasheets
- IRFPS38N60L
N-Channel Tube 150mOhm @ 23A, 10V ±30V 7990pF @ 25V 320nC @ 10V 600V TO-274AA
IRFPS38N60L Overview
The maximum input capacitance of this device is 7990pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 38A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 92 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 150mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 44 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFPS38N60L Features
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 92 ns
single MOSFETs transistor is 150mOhm
a 600V drain to source voltage (Vdss)
IRFPS38N60L Applications
There are a lot of Vishay Siliconix
IRFPS38N60L applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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