IRFPS3815PBF
- Mfr.Part #
- IRFPS3815PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-274AA
- Datasheet
- Download
- Description
- PFET, 105A I(D), 150V, 0.015OHM,
- Stock
- 10,974
- In Stock :
- 10,974
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 6810pF @ 25V
- Radiation Hardening :
- No
- Published :
- 2004
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 63A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Power Dissipation :
- 441W
- Continuous Drain Current (ID) :
- 105A
- Current - Continuous Drain (Id) @ 25°C :
- 105A Tc
- Turn On Delay Time :
- 22 ns
- Number of Terminations :
- 3
- Rise Time :
- 130ns
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 150V
- Packaging :
- Bulk
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- HEXFET®
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Application :
- SWITCHING
- Current Rating :
- 105A
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 51 ns
- Width :
- 5.3mm
- Vgs (Max) :
- ±30V
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Package / Case :
- TO-274AA
- Factory Lead Time :
- 25 Weeks
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 390nC @ 10V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Length :
- 16.0782mm
- Height :
- 20.8mm
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Voltage - Rated DC :
- 150V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Fall Time (Typ) :
- 60 ns
- Power Dissipation-Max :
- 441W Tc
- Datasheets
- IRFPS3815PBF

N-Channel Bulk 15m Ω @ 63A, 10V ±30V 6810pF @ 25V 390nC @ 10V TO-274AA
Description
The IRFPS3815PBF is a HEXFET? Power MOSFET. Advanced processing methods are used by International Rectifier's HEXFET? Power MOSFETs to provide extraordinarily low on-resistance per silicon area. This feature offers the designer a highly efficient and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are widely known for.
Features
-
175°C Operating Temperature
-
Fast Switching
-
Fully Avalanche Rated
-
Lead-Free
-
Advanced Process Technology
-
Ultra Low On-Resistance
-
Dynamic dv/dt Rating
Applications
-
Switch Mode Power Supplies (SMPS)
-
Power-Over-Ethernet (PoE)
-
Solar inverters
-
Automotive applications
-
Switch, buck and synchronous rectification
-
Uninterruptible Power Supplies (UPS)
-
Small motor control
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