IRFPS3810PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Qualification Status :

Not Qualified

Rise Time :

270ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Length :

16.0782mm

Voltage - Rated DC :

100V

Dual Supply Voltage :

100V

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

20.8mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

6790pF @ 25V

Packaging :

Bulk

Published :

2002

Series :

HEXFET®

Turn On Delay Time :

24 ns

Lead Free :

Contains Lead, Lead Free

Transistor Element Material :

SILICON

Nominal Vgs :

5 V

Power Dissipation :

441W

Gate to Source Voltage (Vgs) :

30V

REACH SVHC :

No SVHC

Current Rating :

170A

Pulsed Drain Current-Max (IDM) :

670A

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Width :

5.3mm

Mounting Type :

Through Hole

Case Connection :

DRAIN

Fall Time (Typ) :

140 ns

Package / Case :

TO-274AA

Resistance :

9Ohm

Gate Charge (Qg) (Max) @ Vgs :

390nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Drain to Source Breakdown Voltage :

100V

Recovery Time :

330 ns

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

25 Weeks

Turn-Off Delay Time :

45 ns

Continuous Drain Current (ID) :

170A

ECCN Code :

EAR99

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

9m Ω @ 100A, 10V

FET Type :

N-Channel

Power Dissipation-Max :

580W Tc

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING