IRFPS3810PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

390nC @ 10V

FET Type :

N-Channel

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

170A

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Length :

16.0782mm

Packaging :

Bulk

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

100V

Lead Free :

Contains Lead, Lead Free

REACH SVHC :

No SVHC

Mount :

Through Hole

Power Dissipation :

441W

Element Configuration :

Single

Package / Case :

TO-274AA

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

9m Ω @ 100A, 10V

Number of Pins :

3

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Recovery Time :

330 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

5.3mm

Published :

2002

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Transistor Application :

SWITCHING

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

25 Weeks

Turn-Off Delay Time :

45 ns

Height :

20.8mm

Input Capacitance (Ciss) (Max) @ Vds :

6790pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Nominal Vgs :

5 V

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

24 ns

Voltage - Rated DC :

100V

Series :

HEXFET®

Rise Time :

270ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Fall Time (Typ) :

140 ns

Resistance :

9Ohm

Current Rating :

170A

Pulsed Drain Current-Max (IDM) :

670A

Transistor Element Material :

SILICON

Power Dissipation-Max :

580W Tc

Dual Supply Voltage :

100V