IRFPS37N50APBF
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- Mfr.Part #
- IRFPS37N50APBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-274AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 36A SUPER247
- Stock
- 25,717
- In Stock ：
- 25,717
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 12 Weeks
- Published :
- 2014
- Rds On Max :
- 130 mΩ
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Height :
- 20.8mm
- Lead Free :
- Lead Free
- Power Dissipation :
- 446W
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 52 ns
- Resistance :
- 130mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5579pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-274AA
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1
- Drain to Source Voltage (Vdss) :
- 500V
- Rds On (Max) @ Id, Vgs :
- 130mOhm @ 22A, 10V
- Mount :
- Through Hole
- Weight :
- 38.000013g
- Continuous Drain Current (ID) :
- 36A
- Fall Time (Typ) :
- 80 ns
- Drain to Source Breakdown Voltage :
- 400V
- Length :
- 16.1mm
- Drain to Source Resistance :
- 130mOhm
- Width :
- 5.3mm
- Turn On Delay Time :
- 23 ns
- Power Dissipation-Max :
- 446W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Rise Time :
- 98ns
- Supplier Device Package :
- SUPER-247™ (TO-274AA)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance :
- 5.579nF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Number of Pins :
- 3
- Max Operating Temperature :
- 150°C
- Threshold Voltage :
- 4V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tube
- REACH SVHC :
- Unknown
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Datasheets
- IRFPS37N50APBF
N-Channel Tube 130mOhm @ 22A, 10V ±30V 5579pF @ 25V 180nC @ 10V 500V TO-274AA
IRFPS37N50APBF Overview
A device's maximum input capacitance is 5579pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 36A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=400V, and this device has a drain-to-source breakdown voltage of 400V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 52 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 130mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 23 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFPS37N50APBF Features
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 52 ns
single MOSFETs transistor is 130mOhm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)
IRFPS37N50APBF Applications
There are a lot of Vishay Siliconix
IRFPS37N50APBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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