IRFPS35N50LPBF
- Mfr.Part #
- IRFPS35N50LPBF
- Manufacturer
- Vishay
- Package / Case
- TO-274AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 34A SUPER247
- Stock
- 3,481
- In Stock :
- 3,481
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 5.3mm
- Continuous Drain Current (ID) :
- 34A
- Number of Channels :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Breakdown Voltage :
- 500V
- Published :
- 2009
- Max Operating Temperature :
- 150°C
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain to Source Resistance :
- 145mOhm
- Rds On Max :
- 145 mΩ
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 5580pF @ 25V
- Turn On Delay Time :
- 24 ns
- Length :
- 16.1mm
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance :
- 5.58nF
- Vgs (Max) :
- ±30V
- Min Operating Temperature :
- -55°C
- Weight :
- 38.000013g
- Element Configuration :
- Single
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 42 ns
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 145mOhm @ 20A, 10V
- Rise Time :
- 100ns
- Gate Charge (Qg) (Max) @ Vgs :
- 230nC @ 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Power Dissipation-Max :
- 450W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- SUPER-247™ (TO-274AA)
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-274AA
- Height :
- 20.8mm
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 42 ns
- Datasheets
- IRFPS35N50LPBF
N-Channel Tube 145mOhm @ 20A, 10V ±30V 5580pF @ 25V 230nC @ 10V 500V TO-274AA
IRFPS35N50LPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5580pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 34A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 42 ns.This device has a drain-to-source resistance of 145mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 24 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFPS35N50LPBF Features
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 42 ns
single MOSFETs transistor is 145mOhm
a 500V drain to source voltage (Vdss)
IRFPS35N50LPBF Applications
There are a lot of Vishay Siliconix
IRFPS35N50LPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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