IRFPS30N60KPBF
- Mfr.Part #
- IRFPS30N60KPBF
- Manufacturer
- Vishay
- Package / Case
- TO-274AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A SUPER247
- Stock
- 19,279
- In Stock :
- 19,279
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance :
- 5.87nF
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Width :
- 5mm
- Supplier Device Package :
- SUPER-247™ (TO-274AA)
- Power Dissipation-Max :
- 450W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 220nC @ 10V
- Height :
- 20.3mm
- Number of Channels :
- 1
- Rds On Max :
- 190 mΩ
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 600V
- Rise Time :
- 120ns
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 30V
- Turn-Off Delay Time :
- 56 ns
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 190mOhm @ 18A, 10V
- Published :
- 2009
- Package / Case :
- TO-274AA
- Length :
- 15.6mm
- Max Operating Temperature :
- 150°C
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 29 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Continuous Drain Current (ID) :
- 30A
- Fall Time (Typ) :
- 50 ns
- Element Configuration :
- Single
- Min Operating Temperature :
- -55°C
- Drain to Source Resistance :
- 190mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5870pF @ 25V
- Datasheets
- IRFPS30N60KPBF
N-Channel Tube 190mOhm @ 18A, 10V ±30V 5870pF @ 25V 220nC @ 10V 600V TO-274AA
IRFPS30N60KPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5870pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.It is [56 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 190mOhm.A turn-on delay time of 29 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFPS30N60KPBF Features
a continuous drain current (ID) of 30A
the turn-off delay time is 56 ns
single MOSFETs transistor is 190mOhm
a 600V drain to source voltage (Vdss)
IRFPS30N60KPBF Applications
There are a lot of Vishay Siliconix
IRFPS30N60KPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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