IRFPS29N60LPBF
- Mfr.Part #
- IRFPS29N60LPBF
- Manufacturer
- Vishay
- Package / Case
- TO-274AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 29A SUPER247
- Stock
- 38,073
- In Stock :
- 38,073
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 66 ns
- Rise Time :
- 100ns
- Continuous Drain Current (ID) :
- 29A
- Input Capacitance (Ciss) (Max) @ Vds :
- 6160pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 210mOhm @ 17A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Power Dissipation-Max :
- 480W Tc
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 30V
- Max Operating Temperature :
- 150°C
- Package / Case :
- TO-274AA
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- Drain to Source Resistance :
- 210mOhm
- Height :
- 20.3mm
- Fall Time (Typ) :
- 54 ns
- Input Capacitance :
- 6.16nF
- REACH SVHC :
- Unknown
- Width :
- 5mm
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 34 ns
- Min Operating Temperature :
- -55°C
- Mount :
- Through Hole
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 600V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 220nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- SUPER-247™ (TO-274AA)
- Vgs (Max) :
- ±30V
- Number of Pins :
- 3
- Rds On Max :
- 210 mΩ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Published :
- 2009
- Length :
- 15.6mm
- Mounting Type :
- Through Hole
- Datasheets
- IRFPS29N60LPBF
N-Channel Tube 210mOhm @ 17A, 10V ±30V 6160pF @ 25V 220nC @ 10V 600V TO-274AA
IRFPS29N60LPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6160pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 29A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 66 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 210mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 34 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFPS29N60LPBF Features
a continuous drain current (ID) of 29A
the turn-off delay time is 66 ns
single MOSFETs transistor is 210mOhm
a 600V drain to source voltage (Vdss)
IRFPS29N60LPBF Applications
There are a lot of Vishay Siliconix
IRFPS29N60LPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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