IRFPS29N60LPBF

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Mfr.Part #
IRFPS29N60LPBF
Manufacturer
Vishay
Package / Case
TO-274AA
Datasheet
Download
Description
MOSFET N-CH 600V 29A SUPER247
Stock
38,073
In Stock :
38,073

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
66 ns
Rise Time :
100ns
Continuous Drain Current (ID) :
29A
Input Capacitance (Ciss) (Max) @ Vds :
6160pF @ 25V
Rds On (Max) @ Id, Vgs :
210mOhm @ 17A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Power Dissipation-Max :
480W Tc
Packaging :
Tube
Gate to Source Voltage (Vgs) :
30V
Max Operating Temperature :
150°C
Package / Case :
TO-274AA
Current - Continuous Drain (Id) @ 25°C :
29A Tc
Drain to Source Resistance :
210mOhm
Height :
20.3mm
Fall Time (Typ) :
54 ns
Input Capacitance :
6.16nF
REACH SVHC :
Unknown
Width :
5mm
RoHS Status :
ROHS3 Compliant
Turn On Delay Time :
34 ns
Min Operating Temperature :
-55°C
Mount :
Through Hole
Number of Channels :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
600V
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
220nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Supplier Device Package :
SUPER-247™ (TO-274AA)
Vgs (Max) :
±30V
Number of Pins :
3
Rds On Max :
210 mΩ
Vgs(th) (Max) @ Id :
5V @ 250μA
Published :
2009
Length :
15.6mm
Mounting Type :
Through Hole
Datasheets
IRFPS29N60LPBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFPS29N60LPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-274AA, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, IRFPS29N60LPBF pinout, IRFPS29N60LPBF datasheet PDF, IRFPS29N60LPBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFPS29N60LPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFPS29N60LPBF


N-Channel Tube 210mOhm @ 17A, 10V ±30V 6160pF @ 25V 220nC @ 10V 600V TO-274AA

IRFPS29N60LPBF Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6160pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 29A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 66 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 210mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 34 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFPS29N60LPBF Features


a continuous drain current (ID) of 29A
the turn-off delay time is 66 ns
single MOSFETs transistor is 210mOhm
a 600V drain to source voltage (Vdss)


IRFPS29N60LPBF Applications


There are a lot of Vishay Siliconix
IRFPS29N60LPBF applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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