IRFPG50

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

1000V

Element Configuration :

Single

Rds On Max :

2 Ω

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

Mount :

Through Hole

Turn On Delay Time :

19 ns

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Voltage - Rated DC :

1kV

Fall Time (Typ) :

36 ns

Drain to Source Breakdown Voltage :

1kV

Min Operating Temperature :

-55°C

Packaging :

Tube

Drain to Source Resistance :

2Ohm

Number of Pins :

3

Number of Elements :

1

Current Rating :

6.1A

RoHS Status :

Non-RoHS Compliant

Rise Time :

35ns

Lead Free :

Contains Lead

Number of Channels :

1

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Radiation Hardening :

No

Supplier Device Package :

TO-247-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Length :

15.87mm

Operating Temperature :

-55°C~150°C TJ

Published :

2017

Input Capacitance :

2.8nF

Turn-Off Delay Time :

130 ns

Height :

20.7mm

Vgs (Max) :

±20V

Weight :

38.000013g

Power Dissipation :

190W

Width :

5.31mm

Continuous Drain Current (ID) :

6.1A

FET Type :

N-Channel

Power Dissipation-Max :

190W Tc

Current - Continuous Drain (Id) @ 25°C :

6.1A Tc

Rds On (Max) @ Id, Vgs :

2Ohm @ 3.6A, 10V

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V