IRFPG30

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Mfr.Part #
IRFPG30
Manufacturer
Vishay
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 3.1A TO247-3
Stock
1,614
In Stock :
1,614

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
5.31mm
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
980pF @ 25V
Continuous Drain Current (ID) :
3.1A
Length :
15.87mm
Number of Channels :
1
Element Configuration :
Single
Min Operating Temperature :
-55°C
Lead Free :
Contains Lead
Current Rating :
3.1A
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Weight :
38.000013g
Mounting Type :
Through Hole
Published :
2016
Rise Time :
24ns
Current - Continuous Drain (Id) @ 25°C :
3.1A Tc
Drain to Source Breakdown Voltage :
1kV
Fall Time (Typ) :
29 ns
Rds On (Max) @ Id, Vgs :
5Ohm @ 1.9A, 10V
Voltage - Rated DC :
1kV
Max Operating Temperature :
150°C
Rds On Max :
5 Ω
Turn On Delay Time :
12 ns
Gate to Source Voltage (Vgs) :
20V
Drain to Source Resistance :
5Ohm
Supplier Device Package :
TO-247-3
FET Type :
N-Channel
Packaging :
Tube
Height :
20.7mm
Turn-Off Delay Time :
89 ns
Drain to Source Voltage (Vdss) :
1000V
RoHS Status :
Non-RoHS Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-247-3
Input Capacitance :
980pF
Power Dissipation-Max :
125W Tc
Power Dissipation :
125W
Datasheets
IRFPG30
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFPG30 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, IRFPG30 pinout, IRFPG30 datasheet PDF, IRFPG30 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFPG30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFPG30


N-Channel Tube 5Ohm @ 1.9A, 10V ±20V 980pF @ 25V 80nC @ 10V 1000V TO-247-3

IRFPG30 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 980pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.1A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 89 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 5Ohm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFPG30 Features


a continuous drain current (ID) of 3.1A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 89 ns
single MOSFETs transistor is 5Ohm
a 1000V drain to source voltage (Vdss)


IRFPG30 Applications


There are a lot of Vishay Siliconix
IRFPG30 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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