IRFPG30
- Mfr.Part #
- IRFPG30
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 3.1A TO247-3
- Stock
- 1,614
- In Stock :
- 1,614
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 5.31mm
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 980pF @ 25V
- Continuous Drain Current (ID) :
- 3.1A
- Length :
- 15.87mm
- Number of Channels :
- 1
- Element Configuration :
- Single
- Min Operating Temperature :
- -55°C
- Lead Free :
- Contains Lead
- Current Rating :
- 3.1A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 38.000013g
- Mounting Type :
- Through Hole
- Published :
- 2016
- Rise Time :
- 24ns
- Current - Continuous Drain (Id) @ 25°C :
- 3.1A Tc
- Drain to Source Breakdown Voltage :
- 1kV
- Fall Time (Typ) :
- 29 ns
- Rds On (Max) @ Id, Vgs :
- 5Ohm @ 1.9A, 10V
- Voltage - Rated DC :
- 1kV
- Max Operating Temperature :
- 150°C
- Rds On Max :
- 5 Ω
- Turn On Delay Time :
- 12 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Resistance :
- 5Ohm
- Supplier Device Package :
- TO-247-3
- FET Type :
- N-Channel
- Packaging :
- Tube
- Height :
- 20.7mm
- Turn-Off Delay Time :
- 89 ns
- Drain to Source Voltage (Vdss) :
- 1000V
- RoHS Status :
- Non-RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-247-3
- Input Capacitance :
- 980pF
- Power Dissipation-Max :
- 125W Tc
- Power Dissipation :
- 125W
- Datasheets
- IRFPG30

N-Channel Tube 5Ohm @ 1.9A, 10V ±20V 980pF @ 25V 80nC @ 10V 1000V TO-247-3
IRFPG30 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 980pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.1A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 89 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 5Ohm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFPG30 Features
a continuous drain current (ID) of 3.1A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 89 ns
single MOSFETs transistor is 5Ohm
a 1000V drain to source voltage (Vdss)
IRFPG30 Applications
There are a lot of Vishay Siliconix
IRFPG30 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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