IRFPF50
- Mfr.Part #
- IRFPF50
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 6.7A TO247-3
- Stock
- 1,543
- In Stock :
- 1,543
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 20.7mm
- Turn On Delay Time :
- 20 ns
- Input Capacitance :
- 2.9nF
- Number of Channels :
- 1
- Length :
- 15.87mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Fall Time (Typ) :
- 37 ns
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 2900pF @ 25V
- Turn-Off Delay Time :
- 130 ns
- Package / Case :
- TO-247-3
- Mount :
- Through Hole
- Supplier Device Package :
- TO-247-3
- Mounting Type :
- Through Hole
- Rds On Max :
- 1.6 Ω
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 6.7A
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 6 Weeks
- Drain to Source Voltage (Vdss) :
- 900V
- Min Operating Temperature :
- -55°C
- Drain to Source Resistance :
- 1.6Ohm
- RoHS Status :
- Non-RoHS Compliant
- Element Configuration :
- Single
- Width :
- 5.31mm
- Gate to Source Voltage (Vgs) :
- 20V
- Max Operating Temperature :
- 150°C
- Published :
- 2016
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Rise Time :
- 34ns
- Rds On (Max) @ Id, Vgs :
- 1.6Ohm @ 4A, 10V
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 6.7A Tc
- Power Dissipation-Max :
- 190W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 38.000013g
- Datasheets
- IRFPF50

N-Channel Tube 1.6Ohm @ 4A, 10V ±20V 2900pF @ 25V 200nC @ 10V 900V TO-247-3
IRFPF50 Overview
A device's maximal input capacitance is 2900pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6.7A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 130 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.6Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 900V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFPF50 Features
a continuous drain current (ID) of 6.7A
the turn-off delay time is 130 ns
single MOSFETs transistor is 1.6Ohm
a 900V drain to source voltage (Vdss)
IRFPF50 Applications
There are a lot of Vishay Siliconix
IRFPF50 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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