IRFPF40PBF
- Mfr.Part #
- IRFPF40PBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 4.7A TO247-3
- Stock
- 47,120
- In Stock :
- 47,120
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance :
- 1.6nF
- Width :
- 5.31mm
- Threshold Voltage :
- 4V
- Turn-Off Delay Time :
- 110 ns
- Vgs (Max) :
- ±20V
- Published :
- 2014
- Height :
- 20.7mm
- Contact Plating :
- Tin
- Nominal Vgs :
- 4 V
- Supplier Device Package :
- TO-247-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 32 ns
- Current - Continuous Drain (Id) @ 25°C :
- 4.7A Tc
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 4.7A
- Rds On Max :
- 2.5 Ω
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-247-3
- Number of Pins :
- 3
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 1600pF @ 25V
- Min Operating Temperature :
- -55°C
- REACH SVHC :
- Unknown
- Weight :
- 38.000013g
- Rise Time :
- 36ns
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 2.5Ohm @ 2.8A, 10V
- Length :
- 15.87mm
- Drain to Source Voltage (Vdss) :
- 900V
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 900V
- Number of Elements :
- 1
- Resistance :
- 2.5Ohm
- Turn On Delay Time :
- 15 ns
- Power Dissipation :
- 150W
- FET Type :
- N-Channel
- Max Operating Temperature :
- 150°C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 150W Tc
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Resistance :
- 2.5Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IRFPF40PBF

N-Channel Tube 2.5Ohm @ 2.8A, 10V ±20V 1600pF @ 25V 120nC @ 10V 900V TO-247-3
IRFPF40PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1600pF @ 25V.This device has a continuous drain current (ID) of [4.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=900V, the drain-source breakdown voltage is 900V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.MOSFETs have 2.5Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 900V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFPF40PBF Features
a continuous drain current (ID) of 4.7A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 110 ns
single MOSFETs transistor is 2.5Ohm
a threshold voltage of 4V
a 900V drain to source voltage (Vdss)
IRFPF40PBF Applications
There are a lot of Vishay Siliconix
IRFPF40PBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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